to-92 plastic-encapsulate transistors MPS2907 transistor (pnp) features complementary npn type available (mps2222) maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.6 a p c collector power dissipation 0.625 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -10 n a collector cut-off current i cex v ce =-30v,v eb(off) =-0.5v -50 na emitter cut-off current i ebo v eb =-3v,i c =0 -10 na h fe(1) v ce =-10v,i c =-0.1ma 52 h fe(2) v ce =-10v,i c =-150ma 100 300 dc current gain h fe(3) v ce =-10v,i c =-500ma 32 v ce(sat) i c =-150ma,i b =-15ma -0.4 v collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.67 v v be(sat) i c =-150ma,i b =-15ma -1 v base-emitter saturation voltage v be(sat) i c =-500ma,i b =-50ma -1.2 v transition frequency f t v ce =-20v,i c =-50ma,f=100mhz 200 mhz delay time t d 10 ns rise time t r v cc =-30v,ic=-150ma,i b1 =-15ma 25 ns storage time t s 225 ns fall time t f v cc =-6v,ic=-150ma, i b1 =i b2 =-15ma 60 ns classification of h fe(2) rank l h range 100-200 200-300 to-92 1.emitter 2.base 3. collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,june,2011
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